2n5109


the central semiconductor n is a silicon npn epitaxial planar rf transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. marking: full part number. maximum ratings: (ta=°c unless otherwise noted). symbol. units. collectorbase voltage.

2n5109

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2n5109

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n central semiconductor transistors bipolaires bjt npn wide bd am fiche technique, inventaire et tarifs. msc.pdf . n. description: silicon npn transistor, designed for vhf and uhf equipment. applications include amplifier; predriver, driver, and output stages. also suitable for oscillator and frequencymultiplier functions. absolute maximum ratings (tcase = °c). symbol. parameter. value.

2n5109

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order central semiconductor corp n (ncsnd) at digikey. check stock and pricing, view product specifications, and order online. n silicon npn rf transistor. central semi supplies leading edge discretes for the hottest hightech products. at the same time, central continues to manufacture older technology devices still needed by many manufacturers of products with long life cycles. the n series is a npn rf transistor, offered 

2n5109

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2n5109

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n rf amplifier hf preamplifier lna postmixer. the n is a silicon npn transistor, designed for vhf and uhf equipment. applications include amplifier; predriver, driver, and output stages. it is also suitable for oscillator and frequencymultiplier functions. download specification sheet (pdf) 

2n5109

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pcs n transistor to n: : industrial & scientific. symbol. test conditions. minimum. typical. maximum. units. bvceo. ic = . ma. . v. bvcer. ic = . ma. rbe = Ω. . v. bvcbo. ic = µa. . v. icex. vce = v. vbe = . v. vce = v. vbe = . v tc = oc. .. ma. iceo. vce = v. . µa. iebo. veb = . v. . µa. hfe.

2n5109

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2n5109

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2n5109

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2n5109

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